MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Pulsed Performances
(In Freescale Broadband Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 1200 mA, Pout
= 520 W,
f = 470--860 MHz, 50
μsec Pulse Width, 2.5% Duty Cycle
Power Gain
Gps
?
20.5
?
dB
Drain Efficiency
ηD
?
50
?
%
Input Return Loss
IRL
?
-- 3
?
dB
Pout
@ 1 dB Compression Point, Pulsed CW
(f = 470--860 MHz)
P1dB
?
520
?
W
Typical Two--Tone Performances
(In Freescale Broadband Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 1400 mA, Pout
= 450 W PEP,
f = 470--860 MHz, 100 kHz Tone Spacing
Power Gain
Gps
?
22
?
dB
Drain Efficiency
ηD
?
44
?
%
Intermodulation Distortion
IM3
?
-- 2 9
?
dBc
Input Return Loss
IRL
?
-- 2
?
dB
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